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absolute maximum ratings parameter units i d @ v gs = -12v, t c = 25c continuous drain current -56* i d @ v gs = -12v, t c = 100c continuous drain current -56 i dm pulsed drain current -224 p d @ t c = 25c max. power dissipation 250 w linear derating factor 2.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 725 mj i ar avalanche current -56 a e ar repetitive avalanche energy 25 mj dv/dt peak d iode recovery dv/dt 2.1 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 3.3 (typical) g pre-irradiation international rectifiers r5 tm technology provides high performance power mosfets for spaceapplications. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dcto dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a radiation hardened irhna597064 power mosfet surface mount (smd-2) www.irf.com 1 60v, p-channel technology product summary part number radiation level r ds(on) i d irhna597064 100k rads (si) 0.016 ? -56a* irhna593064 300k rads (si) 0.016 ? -56a* features: single event effect (see) hardened ultra low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight for footnotes refer to the last page smd-2
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irhna597064 pre-irradiation 2 www.irf.com thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 0.5 r thj-pcb junction-to-pc board 1.6

c/w note: corresponding spice and saber models are available on international rectifier website. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) -56* i sm pulse source current (body diode) -224 v sd diode forward voltage -5.0 v t j = 25c, i s = -56a, v gs = 0v t rr reverse recovery time 200 ns t j = 25c, i f =-56a, di/dt -100a/ s q rr reverse recovery charge 500 nc v dd -25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -60 v v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown -0.064 v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state 0.016 ? v gs = -12v, i d = -56a resistance v gs(th) gate threshold voltage -2.0 -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 40 s v ds = -25v, i ds = -56a i dss zero gate voltage drain current -10 v ds = -48v ,v gs =0v -25 v ds = -48v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward -100 v gs = -20v i gss gate-to-source leakage reverse 100 v gs = 20v q g total gate charge 200 v gs =-12v, i d = -56a q gs gate-to-source charge 65 nc v ds = -30v q gd gate-to-drain (miller) charge 60 t d (on) turn-on delay time 30 v dd = -30v, i d = -56a, t r rise time 100 v gs = -12v, r g = 2.35 ? t d (off) turn-off delay time 100 t f fall time 100 l s + l d total inductance 6.0 c iss input capacitance 7022 v gs = 0v, v ds = -25v c oss output capacitance 2897 p f f = 1.0mhz c rss reverse transfer capacitance 267 na nh ns a measured from the center of drain pad to center of source pad
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www.irf.com 3 pre-irradiation irhna597064 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter 100k rads(si) 1 300k rads(si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -60 -60 v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage -2.0 -4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward -100 -100 na v gs =-20v i gss gate-to-source leakage reverse 100 100 v gs = 20 v i dss zero gate voltage drain current -10 -10 a v ds = -48v, v gs =0v r ds(on) static drain-to-source 0.016 0.016 ? v gs = -12v, i d = -56a on-state resistance (to-3) r ds(on) static drain-to-source 0.016 0.016 ? v gs = -12v, i d = -56a on-state resistance (smd-2) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics 1. part number irhna5970642. part number irhna593064 fig a. typical single event effect, safe operating area v sd diode forward voltage -5.0 -5.0 v v gs = 0v, i s = -56a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. typical single event effect safe operating area ion let energy range vds (v) (mev/(mg/cm 2 )) (mev) (m) @vgs=0v @vgs=5v @vgs=10v @vgs=15v @vgs=20v br 37.3 285 36.8 - 60 - 60 - 60 - 60 - 60 i 59.9 345 32.7 - 60 - 60 - 60 - 45 - 25 au 82.3 357 28.5 - 60 - 60 - 60 -70 -60 -50 -40 -30 -20 -10 0 0 5 10 15 20 vgs vds br i au downloaded from: http:///
irhna597064 pre-irradiation 4 www.irf.com normalized on-resistance vs. temperature typical output characteristics typical output characteristics typical transfer characteristics 15 55 . 566 . 577 . 58 -v gs , gate-to-source voltage (v) 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = -25v 20 s pulse width t j = 150c t j = 25c 0.1 1 10 100 -v ds , drain-to-source voltage (v) 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 20 s pulse width tj = 25c vgs top -15v -12v -10v -9.0v -8.0v -7.0v -6.0v bottom -5.0v -5.0v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 20 s pulse width tj = 150c vgs top -15v -12v -10v -9.0v -8.0v -7.0v - 6.0v bottom -5.0v -5.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -12v -75a -56a downloaded from: http:///
www.irf.com 5 pre-irradiation irhna597064
maximum safe operating area typical gate charge vs. gate-to-source voltage typical capacitance vs. drain-to-source voltage typical source-drain diode forward voltage 0.5 1.5 2.5 3.5 4.5 5.5 -v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 - i s d , r e v e r s e d r a i n c u r r e n t ( ) v gs = 0v t j = 150c t j = 25c 1 10 100 -v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 10000 12000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 1 10 100 1000 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 1 00 s 0 20 40 60 80 100 120 140 160 q g, total gate charge (nc) 0 4 8 12 16 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -48v v ds = -30v i d = -56a for test circuit see figure 13 downloaded from: http:///
irhna597064 pre-irradiation 6 www.irf.com fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case maximum drain current vs. case temperature fig 10a. switching time test circuit
1 0.1 % !"!#! + - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 0 20 40 60 80 100 t , case temperature ( c) -i , drain current (a) c d limited by package 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
www.irf.com 7 pre-irradiation irhna597064 fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v t p v ( br ) dss i as 25 50 75 100 125 150 starting t j , junction temperature (c) 0 400 800 1200 1600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -25a -35.4a bottom -56a downloaded from: http:///
irhna597064 pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. -48 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd -30v, starting t j = 25c, l = 0.46mh peak i l = - 56a, v gs = -12v i sd -56a, di/dt -360a/ s, v dd -60v, t j 150c footnotes: case outline and dimensions smd-2 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 10/2008 downloaded from: http:///

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